原著論文

97.  Junhuan Li, Kouji Inagaki, and Kenta Arima
"First-principles simulations of scanning tunneling microscopy images exhibiting anomalous dot patterns on armchair-edged graphene nanoribbons" 
Physical Review Research, Vol. 6, No. 1, pp. 013252 1-9 (2024).
 
96. Nian Liu, Kentaro Sugimoto, Naoya Yoshitaka, Hideaki Yamada, Rongyan Sun, Kenta Arima and Kazuya Yamamura
"Highly efficient finishing of large-sized single crystal diamond substrates by combining nanosecond pulsed laser trimming and plasma-assisted polishing"
Ceramics International, Vol. 49, No. 11, pp. 19109-19123 (2023).
  
95.  Ayumi Ogasawara, Kentaro Kawai, Kazuya Yamamura and Kenta Arima
"Nanocarbon-Induced Etching Property of Semiconductor Surfaces: Testing Nanocarbon's Catalytic Activity for Oxygen Reduction Reaction at a Single-Sheet Level"
ECS Journal of Solid State Science and Technology, Vol. 11, No. 4, pp. 041001 1-5 (2022). 
 
94.  Zhida Ma, Seiya Masumoto, Kentaro Kawai, Kazuya Yamamura, and Kenta Arima
"Separation of Neighboring Terraces on Flattened Si(111) Surface by Selective Etching along Step Edges Using Total Wet-chemical Processing"
Langmuir, Vol. 38, No. 12, pp. 3748-3754 (2022).
  
93.  Nian Liu, Kentaro Sugimoto, Naoya Yoshitaka, Hideaki Yamada, Rongyan Sun, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
"Effects of polishing pressure and sliding speed on the material removal mechanism of single crystal diamond in plasma-assisted polishing"
Diamond and Related Materials, Vol. 124, pp. 108899 1-16 (2022).
 
92.  Xiaozhe Yang, Xu Yang, Haiyang Gu, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
"Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers" 
Ceramics International, Vol. 48, No. 6, pp. 7570-7583 (2022).
 
91.  Xiaozhe Yang, Xu Yang, Haiyang Gu, Kentaro Kawai, Kenta Arima and Kazuya Yamamura
"Charge Utilization Efficiency and Side Reactions in the Electrochemical Mechanical Polishing of 4H-SiC (0001)" 
Journal of The Electrochemical Society, Vol. 169, No. 2, pp. 023501 (2022).
 
90.  Yuki Miyata, Yasunori Nakamukai, Cassia Tiemi Azevedo, Ayano Tsuchida, Miho Morita, Yasushi Oshikane, Junichi Uchikoshi, Kentaro Kawai, Kenta Arima, Mizuho Morita
"Electroluminescence in metal-oxide-semiconductor tunnel diodes with a crystalline silicon/silicon dioxide quantum well" 
Micro and Nanostructures , Vol. 166, pp. 207228 1-10 (2022).
 
89.  Junhuan Li, Shaoxian Li, Tomoki Higashi, Kentaro Kawai, Kouji Inagaki, Kazuya Yamamura, and Kenta Arima
“Atomic-scale insights into the origin of rectangular lattice in nanographene probed by scanning tunneling microscopy”
Physical Review B, Vol. 103, pp. 245433 1-9 (2021).
Full-text link
  
88.  Nian Liu, Hideaki Yamada, Naoya Yoshitaka, Kentaro Sugimoto, Rongyan Sun, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
"Comparison of surface and subsurface damage of mosaic single-crystal
diamond substrate processed by mechanical and plasma-assisted polishing" 
Diamond and Related Materials, Vol. 119, pp. 108555 1-8 (2021).
 
87.  Xiaozhe Yang, Xu Yang, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
“Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface”
Applied Surface Science, Vol. 562, pp. 150130 1-17 (2021).
 
86. Rongyan Sun, Atsunori Nozoe, Junji Nagahashi, Kenta Arima, Kentaro Kawai,
Kazuya Yamamura
“Novel highly-efficient and dress-free polishing technique with plasma-assisted surface modification and dressing”
Precision Engineering, Vol. 72, pp. 224-236 (2021).
 
85.  Xu Yang, Xiaozhe Yang, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
“Novel SiC wafer manufacturing process employing three-step slurryless electrochemical mechanical polishing”
Journal of Manufacturing Processes, Vol. 70, pp. 350-360 (2021). 
 
84. Ryo Mikurino, Ayumi Ogasawara, Tomoki Hirano, Yuki Nakata, Hiroto Yamashita, Shaoxian Li, Kentaro Kawai, Kazuya Yamamura, and Kenta Arima
"Catalytic Properties of Chemically Modified Graphene Sheets to Enhance Etching of Ge Surface in Water"
The Journal of Physical Chemistry C, Vol. 124, No. 11, pp. 6121-6129 (2020).
   
83. Nian Liu, Kohki Sugawara, Naoya Yoshitaka, Hideaki Yamada, Daisuke Takeuchi, Yuko Akabane, Kenichi Fujino, Kentaro Kawai, Kenta Arima, and KazuyaYamamura
“Damage‑free highly efficient plasma‑assisted polishing of a 20‑mm square large mosaic single crystal diamond substrate”
Scientific Reports, Vol. 10, pp. 19432 1-7 (2020).
 
82. Rongyan Sun, Xu Yang, Kenta Arima, Kentaro Kawai, Kazuya Yamamura
“High-quality plasma-assisted polishing of aluminum nitride ceramic”
CIRP Annals, Vol. 69, No. 1, pp. 301-304 (2020).
 
81. Ouki Minami, Ryota Ito, Kohei Hosoo, Makoto Ochi, Yasuhisa Sano, Kentaro Kawai, Kazuya Yamamura, and Kenta Arima
"Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation"
Journal of Applied Physics, Vol. 126, No. 6, pp. 065301 1-10 (2019).
【Selected as a Featured Article, Full-text link】 
 
80. Xu Yang, Rongyan Sun, Kentaro Kawai, Kenta Arima, and Kazuya Yamamura
"Surface Modification and Microstructuring of 4H-SiC(0001) by Anodic Oxidation with Sodium Chloride Aqueous Solution"
ACS Applied Materials & Interfaces, Vol. 11, pp. 2535-2542 (2019).
 
79. Xiaozhe Yang, Xu Yang, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
"Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface"
Electrochemistry Communications, Vol. 100, pp. 1-5 (2019).
 
78. Xu Yang, Xiaozhe Yang, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
"Highly efficient planarization of sliced 4H-SiC (0001) wafer by slurryless electrochemical mechanical polishing"
International Journal of Machine Tools and Manufacture, Vol. 144, pp. 103431 1-7 (2019).
  
77. Xu Yang, Xiaozhe Yang, Rongyan Sun, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
"Obtaining Atomically Smooth 4H–SiC (0001) Surface by Controlling Balance Between Anodizing and Polishing in Electrochemical Mechanical Polishing"
Nanomanufacturing and Metrology, Vol. 2, pp. 140-147 (2019).
 
76. Rongyan Sun, Xu Yang, Keiichiro Watanabe, Shiro Miyazaki, Toru Fukano, Masanobu Kitada, Kenta Arima, Kentaro Kawai, Kazuya Yamamura
"Etching Characteristics of Quartz Crystal Wafers Using Argon Based Atmospheric Pressure CF4 Plasma Stabilized by Ethanol Addition"
Nanomanufacturing and Metrology, Vol. 2, pp. 168-176 (2019).
 
75. Shaoxian Li, Kazuki Nakade, Tomoki Hirano, Kentaro Kawai and Kenta Arima
"Investigation of reaction sequence occurring in graphene-assisted chemical etching of Ge surfaces in water"
Materials Science in Semiconductor Processing, Vol. 87, pp. 32-36 (2018).
 
74. Tomoki Hirano, Kazuki Nakade, Shaoxian Li, Kentaro Kawai and Kenta Arima
"Chemical etching of a semiconductor surface assisted by single sheets of reduced graphene oxide"
Carbon, Vol. 127, pp. 681-687 (2018).
 
73. Takumi Hayashi, Kenta Arima, Naoki Yamashita, Seongsu Park, Zhipeng Ma, Osamu Tabata, Kentaro Kawai
"Nanopore Fabrication of Two-Dimensional Materials on SiO2 Membranes Using He Ion Microscopy"
IEEE Transactions on Nanotechnology, Vol. 17, No. 4, pp. 727-730 (2018).
 
72. Xu Yang, Rongyan Sun, Yuji Ohkubo, Kentaro Kawai, Kenta Arima, Katsuyoshi Endo, Kazuya Yamamura
"Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing"
Electrochimica Acta, Vol. 271, pp. 666-676 (2018).
 
71. Yuki Miyata, Yasunori Nakamukai, Cassia T Azevedo, Miho Morita, Junichi Uchikoshi, Kentaro Kawai, Kenta Arima, Mizuho Morita
"Photoetching method that provides improved silicon-on-insulator layer thickness uniformity in a defined area"
Microelectronic Engineering, Vol. 180, pp. 93-95 (2017).
 
70. Daichi Mori, Hiroshi Oka, Takuji Hosoi, Kentaro Kawai, Mizuho Morita, Ethan J. Crumlin, Zhi Liu, Heiji Watanabe, and Kenta Arima
"Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy"
Journal of Applied Physics, Vol. 120, No. 9, pp. 095306 1-10 (2016).
Full-text link
 
69. Masaki Otani, Kentaro Kawai, Kentaro Tsukamoto, Takabumi Nagai, Kenji Adachi, Junichi Uchikoshi, Kenta Arima, and Mizuho Morita
"Effect of metal particles on the Si etching rate with N-fluoropyridinium salts"
Japanese Journal of Applied Physics, Vol. 55, No. 10, pp. 108003 1-3 (2016).
 
68. Tatsuya Kawase, Yusuke Saito, Atsushi Mura, Takeshi Okamoto, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita, Kazuto Yamauchi, and Kenta Arima
"Catalyst-assisted Electroless Flattening of Ge Surfaces in Dissolved-O2-containing Water"
ChemElectroChem, Vol. 2, No. 11, pp. 1656-1659 (2015).
 
67. Kentaro Kawai, Kenta Arima, Mizuho Morita and Shuichi Shoji
"Microfluidic valve array control system integrating a fluid demultiplexer circuit"
Journal of Micromechanics and Microengineering, Vol. 25, pp. 065016 1-7 (2015).
 
66. Naoki Saito, Daichi Mori, Akito Imafuku, Keisuke Nishitani, Hiroki Sakane, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita and Kenta Arima
"Aggregation of Carbon Atoms at SiO2/SiC(0001) Interface by Plasma Oxidation toward Formation of Pit-free Graphene"
Carbon, Vol. 80, pp. 440-445 (2014).
 
65. Azusa N. Hattori, Ken Hattori, Yuta Moriwaki, Aishi Yamamoto, Shun Sadakuni, Junji Murata, Kenta Arima, Yasuhisa Sano, Kazuto Yamauchi, Hiroshi Daimon, and Katsuyoshi Endo
“Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments”
Japanese Journal of Applied Physics, Vol. 53, No. 2, pp. 021001 1-5 (2014).
 
64. Atsushi Mura, Iori Hideshima, Zhi Liu, Takuji Hosoi, Heiji Watanabe, and Kenta Arima
“Water Growth on GeO2/Ge(100) Stack and Its Effect on the Electronic Properties of GeO2
The Journal of Physical Chemistry C, Vol. 117, No. 1, pp. 165-171 (2013).
 
63. Tatsuya Kawase, Atsushi Mura, Katsuya Dei, Keisuke Nishitani, Kentaro Kawai,
Junichi Uchikoshi, Mizuho Morita and Kenta Arima
“Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning”
Nanoscale Research Letters, Vol. 8, pp. 151 1-7 (2013).
 
62. Junichi Uchikoshi, Yoshinori Hayashi, Noritaka Ajari, Kentaro Kawai, Kenta Arima and Mizuho Morita
“Absolute flatness measurements of silicon mirrors by a three-intersection method by near-infrared interferometry”
Nanoscale Research Letters, Vol. 8, pp. 275 1-7 (2013).
 
61. Yasuhisa Sano, Kenta Arima and Kazuto Yamauchi
“Planarization of SiC and GaN Wafers Using Polishing Technique Utilizing Catalyst Surface Reaction”
ECS Journal of Solid State Science and Technology, Vol. 2, No. 8, pp. N3028-N3055 (2013).
 
60. Tatsuya Kawase, Atsushi Mura, Keisuke Nishitani, Yoshie Kawai, Kentaro Kawai,
Junichi Uchikoshi, Mizuho Morita, and Kenta Arima
“Catalytic behavior of metallic particles in anisotropic etching of Ge(100) surfaces in water mediated by dissolved oxygen”
Journal of Applied Physics, Vol. 111, No. 12, pp. 126102 1-3 (2012).
 
59. Kentaro Tsukamoto, Junichi Uchikoshi, Masaki Otani, Toshinori Hirano, Yutaka Ie, Takabumi Nagai, Kenji Adachi, Kentaro Kawai, Kenta Arima, Mizuho Morita
“Characterization of Si etching with N-fluoropyridinium salt”
Current Applied Physics, Vol. 12, Supplement 3, pp. S29-S32 (2012).
 
58. Kentaro Kawai, Masaru Fujii, Junichi Uchikoshi, Kenta Arima, Shuichi Shoji,
Mizuho Morita
“Continuous generation of femtolitre droplets using multistage dividing microfluidic channel”
Current Applied Physics, Vol. 12, Supplement 3, pp. S33-S37 (2012).
 
57. Junji Murata, Shun Sadakuni, Takeshi Okamoto, Azusa N. Hattori, Keita Yagi,
Yasuhisa Sano, Kenta Arima, Kazuto Yamauchi
“Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst”
Journal of Crystal Growth, Vol. 349, No. 1, pp. 83-88 (2012).
 
56. Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, Bui Van Pho, Kenta Arima,
Kouji Inagaki, Keita Yagi, Junji Murata, Shun Sadakuni, Hiroya Asano, Ai Isohashi, and Kazuto Yamauchi
“Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid”
Japanese Journal of Applied Physics, Vol. 51, No. 4, pp. 046501 1-4 (2012).
 
55. Junji Murata, Takeshi Okamoto, Shun Sadakuni, Azusa N. Hattori, Keita Yagi,
Yasuhisa Sano, Kenta Arima, and Kazuto Yamauchi
“Atomically Smooth Gallium Nitride Surfaces Prepared by Chemical Etching with Platinum Catalyst in Water”
Journal of The Electrochemical Society, Vol. 159, No. 4, pp. H417-H420 (2012).
 
54. Kenta Arima, Katsuyoshi Endo, Kazuto Yamauchi, Kikuji Hirose, Tomoya Ono, Yasuhisa Sano
“Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations”
Journal of Physics-Condensed Matter, Vol. 23, No. 39, pp. 394202 1-14 (2011).
【論文中の図面が、当該号の表紙に掲載された。】
 
53. Hiroki Sakane, Akina Yoshimatsu, Takushi Shigetoshi, Junichi Uchikoshi, Mizuho Morita and Kenta Arima
“Selective adsorption of organosilane molecules along step edges of atomically flattened Si(111) surfaces”
Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, pp. 2962-2967 (2011).
 
52. Katsuya Dei, Tatsuya Kawase, Kazufumi Yoneda, Junichi Uchikoshi, Mizuho Morita
and Kenta Arima
“Characterization of terraces and steps on Cl-terminated Ge(111) surfaces after HCl treatment in N2 ambient”
Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, pp. 2968-2972 (2011).
 
51. Kazuto Yamauchi, Hidekazu Mimura, Takashi Kimura, Hirokatsu Yumoto,
Soichiro Handa, Satoshi Matsuyama, Kenta Arima, Yasuhisa Sano, Kazuya Yamamura, Koji Inagaki, Hiroki Nakamori, Jangwoo Kim, Kenji Tamasaku, Yoshinori Nishino, Makina Yabashi and Tetsuya Ishikawa
“Single-nanometer focusing of hard x-rays by Kirkpatrick-Baez mirrors”
Journal of Physics: Condensed Matter, Vol. 23, No. 39, pp. 394206 1-9 (2011).
 
50. Yuji Kuwahara, Akira Saito, Kenta Arima and Hiromasa Ohmi
“Center of Excellence for Atomically Controlled Fabrication Technology”
Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, pp. 2763-2776 (2011).
 
49. Junji Murata, Yuki Shirasawa, Yasuhisa Sano, Shun Sadakuni, Keita Yagi,
Takeshi Okamoto, Azusa N. Hattori, Kenta Arima and Kazuto Yamauchi
“Improved Optical and Electrical Characteristics of Free-Standing GaN Substrates by Chemical Polishing Utilizing Photo-Electrochemical Method”
Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, pp. 2882-2885 (2011).
 
48. Azusa N. Hattori, Takeshi Okamoto, Shun Sadakuni, Junji Murata, Hideo Oi,
Kenta Arima, Yasuhisa Sano, Ken Hattori, Hiroshi Daimon, Katsuyoshi Endo and Kazuto Yamauchi
“Structure and Magnetic Properties of Mono- and Bi-Layer Graphene Films on Ultraprecision Figured 4H-SiC(0001) Surfaces”
Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, pp. 2897-2902 (2011).
 
47. Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, Kenta Arima, Azusa N. Hattori, Keita Yagi, Junji Murata, Shun Sadakuni, and Kazuto Yamauchi
“Dependence of Process Characteristics on Atomic-Step Density in Catalyst-Referred Etching of 4H-SiC(0001) Surface”
Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, pp. 2928-2930 (2011).
 
46. Shun Sadakuni, Junji Murata, Keita Yagi, Yasuhisa Sano, Takeshi Okamoto,
Arima Kenta, Azusa N. Hattori, and Kazuto Yamauchi
“Efficient Wet Etching of GaN(0001) Substrate with Subsurface Damage Layer”
Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, pp. 2979-2982 (2011).
 
45. Azusa N. Hattori, Takeshi Okamoto, Shun Sadakuni, Junji Murata, Kenta Arima, Yasuhisa Sano, Ken Hattori, Hiroshi Daimon, Katsuyoshi Endo and Kazuto Yamauchi
“Formation of wide and atomically flat graphene layers on ultraprecision-figured 4H-SiC(0001) surfaces”
Surface Science, Vol. 605, No. 5-6, pp. 597-605 (2011).
 
44. Kenta Arima, Peng Jiang, Xingyi Deng, Hendrik Bluhm and Miquel Salmeron
“Water Adsorption, Solvation, and Deliquescence of Potassium Bromide Thin Films on SiO2 Studied by Ambient-Pressure X-ray Photoelectron Spectroscopy”
The Journal of Physical Chemistry C, Vol. 114, No. 35, pp. 14900-14906 (2010).
【“ANNUAL REPORT OF OSAKA UNIVERSITY Academic Achievement 2010-2011
において100 Selected Papersの一つに選ばれた。】
 
43. Kentaro Tsukamoto, Junichi Uchikoshi, Shigeharu Goto, Tatsuya Kawase, Noritaka Ajari, Takabumi Nagai, Kenji Adachi, Kenta Arima and Mizuho Morita
“Photoetching of Silicon by N-Fluoropyridinium Salt”
Electrochemical and Solid-State Letters, Vol. 13, No. 11, pp. D80-D82 (2010).
 
42. Kenta Arima, Peng Jiang, Deng-Sung Lin, Albert Verdaguer, and Miquel Salmeron
“Ion Segregation and Deliquescence of Alkali Halide Nanocrystals on SiO2
The Journal of Physical Chemistry A, Vol. 113, No. 35, pp. 9715-9720 (2009).
【“ANNUAL REPORT OF OSAKA UNIVERSITY Academic Achievement 2009-2010
において100 Selected Papersの一つに選ばれた。】
 
41. Junji Murata, Shun Sadakuni, Keita Yagi, Yasuhisa Sano, Takeshi Okamoto,
Kenta Arima, Azusa N. Hattori, Hidekazu Mimura and Kazuto Yamauchi
“Planarization of GaN(0001) Surfaces by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst”
Japanese Journal of Applied Physics, Vol. 48, No. 12, pp. 121001 1-4 (2009).
 
40. Takaaki HIROKANE, Hideaki HASHIMOTO, Daisuke KANZAKI, Shinichi URABE, Kenta ARIMA, Junichi UCHIKOSHI, and Mizuho MORITA
“Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices”
Analytical Sciences, Vol. 25, No. 1, pp. 101-104 (2009).
 
39. Kenta ARIMA, Yuji HIDAKA, Kenji HIWA, Junichi UCHIKOSHI, and Mizuho MORITA
“Development of Surface Hall Potentiometry to Reveal the Variation of Drift Velocity of Carriers in Semiconductor Materials”
Japanese Journal of Applied Physics, Vol. 47, No. 4, pp. 3041-3045 (2008).
 
38. Akina Yoshimatsu, Takushi Shigetoshi, Junichi Uchikoshi, Mizuho Morita
and Kenta Arima
Ex situ scanning tunneling microscopy study of Cu nanowires formed by electroless deposition at atomic-step edges of flat Si(111) surfaces”
Surface and Interface Analysis, Vol. 40, No. 6-7, pp. 1134-1137 (2008).
 
37. Xing Wu, Junichi Uchikoshi, Takaaki Hirokane, Ryuta Yamada, Akihiro Takeuchi,
Kenta Arima and Mizuho Morita
“Characterization of Pinhole in Pattened Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy”
Journal of The Electrochemical Society, Vol. 155, No. 11, pp. H864-H868 (2008).
 
36. Takaaki Hirokane, Daisuke Kanzaki, Hideaki Hashimoto, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
“Sensing of λDNA solutions by metal-gap-semiconductor devices”
Surface and Interface Analysis, Vol. 40, No. 6-7, pp. 1131-1133 (2008).
 
35. Takaaki HIROKANE, Naoto YOSHII, Tatsuya OKAZAKI, Shinichi URABE,
Kazuo NISHIMURA, Satoru MORITA, Kenta ARIMA, Junichi UCHIKOSHI,
and Mizuho MORITA
“Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method”
Japanese Journal of Applied Physics, Vol. 47, No. 11, pp. 8317-8320 (2008).
 
34. Xing WU, Junichi UCHIKOSHI, Takaaki HIROKANE, Ryuta YAMADA,
Akihiro TAKEUCHI, Kenta ARIMA and Mizuho MORITA
“Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy”
Japanese Journal of Applied Physics, Vol. 47, No. 4, pp. 2511-2514 (2008).
 
33. J. Murata, A. Kubota, K. Yagi, Y. Sano, H. Hara, K. Arima, T. Okamoto,
H. Mimura, K. Yamauchi
“Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution”
Journal of Crystal Growth, Vol. 310, No. 7-9, pp. 1637-1641 (2008).
 
32. Keita Yagi, Junji Murata, Akihisa Kubota, Yasuhisa Sano, Hideyuki Hara,
Takeshi Okamoto, Kenta Arima, Hidekazu Mimura, Kazuto Yamauchi
“Catalyst-referred etching of 4HSiC substrate utilizing hydroxyl radicals generated from hydrogen peroxide molecules”
Surface and Interface Analysis, Vol. 40, No. 6-7, pp. 998-1001 (2008).
 
31. Keita YAGI, Junji MURATA, Akihisa KUBOTA, Yasuhisa SANO, Hideyuki HARA, Kenta ARIMA, Takeshi OKAMOTO, Hidekazu MIMURA, and Kazuto YAMAUCHI
“Defect-Free Planarization of 4H-SiC(0001) Substrate Using Reference Plate”
Japanese Journal of Applied Physics, Vol. 47, No. 1, pp. 104-107 (2008).
 
30. Junichi UCHIKOSHI, Amane TSUDA, Noritaka AJARI, Taichirou OKAMOTO,
Kenta ARIMA, and Mizuho MORITA
“Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Interferometry”
Japanese Journal of Applied Physics, Vol. 47, No. 12, pp. 8978-8981 (2008).
 
29. Kenta Arima, Hideyuki Hara, Junji Murata, Takeshi Ishida, Ryota Okamoto, Keita Yagi, Yasuhisa Sano, Hidekazu Mimura, and Kazuto Yamauchi
“Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst”
Applied Physics Letters, Vol. 90, No. 20, pp. 202106 1-3 (2007).
【“ANNUAL REPORT OF OSAKA UNIVERSITY Academic Achievement 2007-2008”
において24 Selected Graphicsの一つに選ばれた。】
 
28. Takushi Shigetoshi, Haruyuki Inoue, Tsukasa Kawashima, Takaaki Hirokane,
Toshihiko Kataoka, Mizuho Morita, and Kenta Arima
“Microscratches with Depths of Angstrom Order on Si Wafers Detected by Light Scattering and AFM”
Electrochemical and Solid-State Letters, Vol. 10, No. 7, pp. H206-H209 (2007).
 
27. Akinobu Teramoto, Tatsufumi Hamada, Masashi Yamamoto, Philippe Gaubert,
Hiroshi Akahori, Keiichi Nii, Masaki Hirayama, Kenta Arima, Katsuyoshi Endo, Shigetoshi Sugawa, and Tadahiro Ohmi
“Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface”
IEEE Transactions on Electron Devices, Vol. 54, No. 6, pp. 1438-1445 (2007).
 
26. Hideaki HASHIMOTO, Ryuta YAMADA, Takaaki HIROKANE, Kenta ARIMA,
Junichi UCHIKOSHI, and Mizuho MORITA
“Photodetective Characteristics of Metal?Oxide?Semiconductor Tunneling Structure with Aluminum Grid Gate”
Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2467-2470 (2007).
 
25. Noritaka AJARI, Junichi UCHIKOSHI, Takaaki HIROKANE, Kenta ARIMA, and Mizuho MORITA
“Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope”
Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 1994-1996 (2007).
 
24. Hideyuki Hara, Yasuhisa Sano, Kenta Arima, Keita Yagi, Junji Murata, Akihisa Kubota, Hidekazu Mimura, Kazuto Yamauchi
“Catalyst-referred etching of silicon”
Science and Technology of Advanced Materials, Vol. 8, No. 3, pp. 162?165 (2007).
 
23. Kenta Arima, Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Katsuyoshi Endo,
Yuzo Mori and Kazuto Yamauchi
“Highly resolved scanning tunneling microscopy study of Si(001) surfaces flattened in aqueous environment”
Surface Science, Vol. 600, No. 15, pp. L185-L188 (2006).
 
22. Kenta ARIMA, Kenji HIWA, Ryoji NAKAOKA and Mizuho MORITA
“Surface Hall Potentiometry for Characterizing Semiconductor Films”
Japanese Journal of Applied Physics, Vol. 45, No. 4B, pp. 3601-3605 (2006).
 
21. Jun Katoh, Kenta Arima, Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Yuzo Mori,
Kazuto Yamauchi, and Katsuyoshi Endo
“Atomic-Scale Evaluation of Si(111) Surfaces Finished by the Planarization Process Utilizing SiO2 Particles Mixed with Water”
Journal of The Electrochemical Society, Vol. 153, No. 6, pp. G560-G565 (2006).
 
20. Kenta Arima, Takushi Shigetoshi, Hiroaki Kakiuchi, Mizuho Morita
“Surface photovoltage measurements of intrinsic hydrogenated amorphous Si films on Si wafers on the nanometer scale”
Physica B, Vol. 376-377, pp. 893-896 (2006).
 
19. Shuhei Nishikawa, Hideaki Hashimoto, Motonori Chikamoto, Kosuke Horikoshi,
Minoru Aoki, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
“Photo current through SnO2/SiC/p-Si(100) Structures”
Thin Solid Films, Vol. 508, No. 1-2, pp. 385-388 (2006).
 
18. Yasuhisa SANO, Masayo WATANABE, Kazuya YAMAMURA, Kazuto YAMAUCHI,
Takeshi ISHIDA, Kenta ARIMA, Akihisa KUBOTA and Yuzo MORI
“Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining”
Japanese Journal of Applied Physics, Vol. 45, No. 10B, pp. 8277-8280 (2006).
 
17. HIDEYUKI HARA, YASUHISA SANO, HIDEKAZU MIMURA, KENTA ARIMA, AKIHISA KUBOTA, KEITA YAGI, JUNJI MURATA, and KAZUTO YAMAUCH1
“Novel Abrasive-Free Planarization of 4H-SiC (0001) Using Catalyst”
Journal of ELECTRONIC MATERIALS, Vol. 35, No. 8, pp. L11-L14 (2006).
 
16. 井上晴行、片岡俊彦、長尾祥浩、押鐘寧、中野元博、
越智保文、有馬健太、森田瑞穂
“レーザ光散乱法によるSiウエハ表面上の極薄酸化膜段差の計測”
精密工学会誌, Vol. 72, No. 11, pp. 1363-1367 (2006).
 
15. Kenta Arima, Jun Katoh, Shinya Horie, Katsuyoshi Endo, Tomoya Ono,
Shigetoshi Sugawa, Hiroshi Akahori, Akinobu Teramoto, and Tadahiro Ohmi
“Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by highly resolved scanning tunneling microscopy”
Journal of Applied Physics, Vol. 98, No. 10, pp. 103525 1-8 (2005).
【“ANNUAL REPORT OF OSAKA UNIVERSITY Academic Achievement 2005-2006
において100 Selected Papersの一つに選ばれた。】
 
14. Shinya Horie, Kenta Arima, Kikuji Hirose, Jun Katoh, Tomoya Ono and Katsuyoshi Endo
“First-principles study on scanning tunneling microscopy images of different hydrogen-terminated Si(110) surfaces”
Physical Review B, Vol. 72, No. 11, pp. 113306 1-4 (2005).
 
13. AKIHISA KUBOTA, HIDEKAZU MIMURA, KOUJI INAGAKI, KENTA ARIMA, YUZO MORI, and KAZUTO YAMAUCHI
“Preparation of Ultrasmooth and Defect-Free 4H-SiC(0001) Surfaces by Elastic Emission Machining”
Journal of ELECTRONIC MATERIALS, Vol. 34, No. 4, pp. 439-443 (2005).
 
12. Kenta Arima, Jun Katoh and Katsuyoshi Endo
“Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning”
Applied Physics Letters, Vol. 85, No. 25, pp. 6254-6256 (2004).
Virtual Journal of Nanoscale Science and Technologyに再録された。】
 
11. Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita
and Yuzo Mori
“Scanning tunneling microscopy/spectroscopy observation of intrinsic hydrogenated amorphous silicon surface under light irradiation”
Surface Science, Vol. 572, No. 2-3, pp. 449-458 (2004).
 
10. Kenta ARIMA, Hiroaki KAKIUCHI, Manabu IKEDA, Katsuyoshi ENDO,
Mizuho MORITA and Yuzo MORI
“Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces”
Japanese Journal of Applied Physics, Vol. 43, No. 4B, pp.1891-1895 (2004).
 
9. 山内和人、三村秀和、久保田章亀、有馬健太、稲垣耕司、遠藤勝義、森勇藏
“EEM(Elastic Emission Machining)によるSi(001)表面の平坦化(第2報) : 加工表面の原子像観察と構造評価”
精密工学会誌, Vol. 70, No. 4, pp. 547-551 (2004).
 
8. Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Isao KOJIMA, and Yasushi AZUMA
“FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO2 Surfaces”
ANALYTICAL SCIENCES, Vol. 19, No. 11, pp. 1557-1559 (2003).
 
7. Katsuyoshi ENDO, Tomoya ONO, Kenta ARIMA, Yuji UESUGI, Kikuji HIROSE
and Yuzo MORI
“Atomic-Structure of Si(001)-c(4×4) Formed by Heating Processes after Wet Cleaning and Its First-Principles Study”
Japanese Journal of Applied Physics, Vol. 42, No. 7B, pp. 4646-4649 (2003).
 
6. Katsuyoshi Endo, Kenta Arima, Kikuji Hirose, Toshihiko Kataoka, and Yuzo Mori
“Atomic image of hydrogen-terminated Si(001) surfaces after wet cleaning and its first-principles study”
Journal of Applied Physics, Vol. 91, No. 7, pp. 4065-4072 (2002).
 
5. Kenta Arima, Katsuyoshi Endo, Toshihiko Kataoka, Yasushi Oshikane, Haruyuki Inoue,
and Yuzo Mori
“Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning”
Applied Physics Letters, Vol. 76, No. 4, pp.463-465 (2000).
 
4. K. Arima, K. Endo, T. Kataoka, Y. Oshikane, H. Inoue, and Y. Mori
“Scanning Tunneling Microscopy Study of Hydrogen-terminated Si(001) Surfaces after Wet Cleaning”
Surface Science, Vol.446, No.1-2, pp.128-136 (2000).
 
3. Kenta Arima, Katsuyoshi Endo, Toshihiko Kataoka, Kikuji Hirose, Hidekazu Goto, Yasushi Oshikane, Haruyuki Inoue, Yoshitaka Tatara, Yuzo Mori
“Observation of metal on Si(001) by STM/STS and its consideration based on the first principles calculations”
Computational Materials Science, Vol. 14, No. 1-4, pp. 236-240 (1999).
 
2. Katsuyoshi Endo, Kenta Arima, Toshihiko Kataoka, Yasushi Oshikane, Haruyuki Inoue,
and Yuzo Mori
“Atomic Structures of Hydrogen-Terminated Si(001) Surfaces After Wet Cleaning by Scanning Tunneling Microscopy”
Applied Physics Letters, Vol.73, No.13, pp.1853-1855 (1998).
 
1. K. Endo, K. Arima, T. Kataoka, K. Hirose, Y. Oshikane, H. Inoue, H. Kuramochi, T. Sato, and Y. Mori
“STM/STS and the First Principles Calculations on Al/Si(001)-2×1”
Applied Physics A, Vol. 66, No. 1 Supplement, pp. S145-S148 (1998).
 

  

総説・解説

25.  有馬健太
”超精密な表面計測が拓く次世代ものづくり:ナノ表面界面工学の世界”
TECHNO NET、601号、pp. 4-5 (2023).
 
 
24. 有馬健太
”ナノ表面界面工学領域の始動にあたって”
生産と技術、75巻、3号、pp. 34-36 (2023).
  
23. 三栗野諒、小笠原歩見、川合健太郎、山村和也、有馬健太
”ナノカーボンの触媒作用に基づく半導体表面の選択エッチング” 
表面と真空、64巻、8号、pp. 352-357 (2021).
 
22.  有馬健太
”ナノカーボン触媒を用いた半導体表面の選択エッチングと応用”
化学工業、72巻、2号、pp. 77-83 (2021).
  
21. 有馬健太
"巻頭言-関西での学術講演会が拓いた学会の新時代"
表面と真空、62巻、8号、p. 469 (2019).
 
20.  有馬健太
”準大気圧下でのX線光電子分光測定による水分子が吸着した極薄GeO2/Ge及びSiO2/Si構造の観察”
表面科学、38巻、7号、pp. 330-335 (2017).
 
19. 佐野泰久、有馬健太、山内和人
“触媒表面を基準面とする化学研磨法の開発”
砥粒加工学会誌、61巻、8号、pp. 426-429 (2017).
 
18. 有馬健太
”洗浄技術のコツ ~Si表面のウェット洗浄~”
応用物理、84巻、11号、pp. 1009-1012 (2015).
 
17. 有馬健太、川合健太郎、森田瑞穂
”水中での溶存酸素を介したGe表面の金属アシストエッチングの基礎特性”
表面科学、36巻、7号、pp. 369-374 (2015).
 
16. 有馬健太
“極薄GeO2/Ge(100)上に形成された吸着水の準大気圧下でのX線光電子分光観察”
Journal of The Vacuum Society of Japan誌、58巻、1号、pp. 20-26 (2015).

 
15. 有馬健太
“超精密加工後の半導体表面の原子構造観察”
精密工学会誌、80巻、5号、pp. 452-456 (2014).
 
14.  堤建一(インタビュア:有馬健太
“最新の電子光学装置が拓く表面・界面解析技術の現状と将来”
精密工学会誌、80巻、5号、pp. 425-428 (2014).
 
13. 山内和人、佐野泰久、有馬健太
“ウェットエッチングによる原子スケール平坦化
-触媒表面基準エッチング法の開発-”
応用物理、82巻、5号、pp. 403-406 (2013).
 
12.  龍田康登(インタビュア:有馬健太、芦田極)
“生産システムの開発とともに40年、そして2013年の夢”
精密工学会誌、79巻、1号、pp. 3-6 (2013).
 
11.  山内和人、佐野泰久、有馬健太
“触媒表面基準エッチングによる単結晶SiC, GaN, ZnO表面の平滑化”
表面科学、33巻、6号、pp. 334-338 (2012).
【日本表面科学会 会誌賞 受賞(2013年度)】
 
10.  山内和人、佐野泰久、有馬健太
“触媒表面基準エッチングによる単結晶SiC, GaN表面の平滑化”
精密工学会誌、78巻、11号、pp. 947-951 (2012).
 
9.  有馬健太、Hendrik Bluhm、Miquel Salmeron
“アルカリハライド微結晶群の潮解液滴表面その場観察:液滴内イオン分布の考察と環境科学への展開”
表面科学、32巻、6号、pp. 368-373 (2011).
 
8.  佐野泰久、有馬健太、山内和人
“SiC基板表面の原子レベル平坦化”
光技術コンタクト、49巻、12号、pp. 22-27 (2011).
 
7.  服部 梓、岡本武志、定國 峻、村田順二、有馬健太、佐野泰久、
遠藤勝義、山内和人
“超平坦化加工を施した4H-SiC(0001)表面 -高品質グラフェン作製への応用-”
表面科学、31巻、9号、pp. 466-473 (2010).
 
6.  山内和人、佐野泰久、有馬健太
“触媒基準エッチング法(CAtalyst Referred Etching: CARE)の開発”
機械と工具、53巻、8号、pp. 20-24 (2009).
 
5.  佐野泰久、原英之、有馬健太、山内和人
“原子レベルで平坦な表面の創成技術”
トライボロジスト、55巻、3号、pp. 148-153 (2010).
 
4.  原英之、佐野泰久、有馬健太、山内和人
“触媒基準エッチング法”
応用物理, Vol. 77, pp. 168-171 (2008).
 
3.  桑原裕司、有馬健太、赤井恵、齋藤彰、遠藤勝義、青野正和
“ナノ材料・表面の原子構造・機能評価 -STMをベースにした新規計測手法の開発とその応用-”
超精密, Vol. 15, pp. 70-75 (2006).
 
2.  有馬健太、遠藤勝義、片岡俊彦、森勇藏
“湿式洗浄Si(001)水素終端化表面のSTM観察と第一原理計算による考察”
シリコンテクノロジー, Vol. 17, pp. 10-13 (2000).
 
1.  K. Endo, K. Arima, T. Kataoka, Y. Oshikane, H. Inoue, K. Koba, K. Hirose, Y. Mori
“STM/STS observations and first-principles simulations of metal adsorbed Si(001) surfaces”
Technology Reports of the Osaka University, Vol. 50, pp. 41-47 (2000).
 

  

著 書

6.  有馬健太
第6章 ウェットエッチング技術の開発動向 の中の
第3節 "触媒アシストエッチングの反応機構と最新加工事例" (pp. 435-444)

『先端半導体製造プロセスの最新動向と微細化技術』
(株)技術情報協会、東京 (2023).
  
5.  有馬健太
第4章 半導体デバイス製造プロセスを支える表面分析・評価技術 の中の
第1節 ”固液界面反応/現象により創成される半導体表面の極限評価技術” (pp. 63-75)

『半導体製造プロセスを支える洗浄・クリーン化・汚染制御技術』
サイエンス&テクノロジー(株)、東京 (2022).
 
4.  有馬健太
第4章 新しいエッチング技術の研究開発動向 中の
第4節 ”触媒アシストエッチング”(pp. 233-252)

『半導体製造におけるウェット/ドライエッチング技術』
(株)R&D支援センター、東京 (2022).
 
3.  有馬健太
第2編 薄膜の作成と加工: 第1章 基板と表面処理 中の
第2節 “半導体基板(Si, Ge, SiC)” (pp. 290-297)

『2020版 薄膜作製応用ハンドブック』
(株)エヌ・ティー・エス、東京 (2020).
  
2. 有馬健太
第3部 第1章 1節 “固液界面の電子移動と化学”  (pp. 181-187)
第3部 第2章 3節 “半導体表面の不動態化構造制御” (pp. 227-236)

『超精密加工と表面科学 ~原子レベルの生産技術~』
大阪大学グローバルCOEプログラム 高機能化原子制御製造プロセス教育研究拠点/精密工学会超精密加工専門委員会 編、大阪大学出版会、大阪 (2014).
 
1. 有馬健太
“問題4.14 洗浄と純水”  (p. 159)

『現代表面科学シリーズ 6.問題と解説で学ぶ表面科学』
日本表面科学会編、共立出版、東京 (2013).
 

  

国際会議発表〔抜粋〕

 56.  Kenta Arima, Zhida Ma, Tetsuro Takeuchi, Ryuto Hashimoto, Rongyan Sun, Kazuya Yamamura
"Wet Chemical Processing to Form Nanotrenches along Step Edges on a Vicinal Si(111) Surface Composed of Terraces and Atomic Steps"
Program of 2023 MRS Spring Meeting, San Francisco, USA, EL07.02.06 (2023). 
 
 55. Kenta Arima, Zhida Ma, Tetsuro Takeuchi, Ryuto Hashimoto, Rongyan Sun, Kazuya Yamamura
"Nanotrench Formation along Step Edges of Vicinal Si(111) Surfaces by Wet-chemical Treatments"
Abstract Book & Schedule of 48th Conference on the Physics & Chemistry of Surfaces & Interfaces, Redondo Beach, USA, PCSI-MoM232 (2023).
  
 54. Junhuan Li, Kouji Inagaki, Rongyan Sun, Kazuya Yamamura, Kenta Arima
"Origin of Rectangular-like Lattice on Nanographene in STM Images Unveiled by First-Principles Calculations"
Abstract Book & Schedule of 48th Conference on the Physics & Chemistry of Surfaces & Interfaces, Redondo Beach, USA, PCSI-WeA242 (2023).
 
 53. K. Arima, Z. Ma, S. Masumoto, K. Kawai, and K. Yamamura
"Formation and Characterization of Nanotrenches along Step Edges of a Flattened Si Surface by Self-assembled Processes in Solutions"
ICPE (The 19th International Conference on Precision Engineering) 2022 Proceedings, Nara, C182 (2022).
  
 52. K. Arima, Z. Ma, S. Masumoto, K. Kawai, and K. Yamamura
"Self-assembled Ag Nanowires to Catalyze Nanotrench Formation Along Step Edges on Vicinal Si(111)"
ABSTRACT of The 22nd International Vacuum Congress, Sapporo, Thu-E1-3 (2022).
 
 51. 【Invited】Kenta Arima, Zhida Ma, Seiya Masumoto, Rongyan Sun, Kazuya Yamamura
"Ag-assisted chemical etching to separate neighboring terraces along step edges on vicinal Si(111) surface"
ABSTRACT BOOK of International Conference on Materials Science, Engineering and Technology, hybrid (Singapore+online), pp. 87-88 (2022).
 
 50. K. Arima, S. Masumoto, Z. Ma, K. Kawai and K. Yamamura
"Nanogroove Formation By Ag-Assisted Chemical Etching to Separate Neighboring Terraces on Vicinal Si(111)"
Meeting Program of PRiME 2020 (Online) C03-1222 (2020). 
 
 49. 【Invited】Kenta Arima
"Adsorption of Water Molecules on Oxide Surfaces and Its Impact on the Electronic Property of the Oxides Probed by In Situ XPS" 
PROGRAM & ABSTRACTS of Collaborative Conference on Materials Science and Technology 2019, Shanghai, China, p. 17 (2019).
 
 48.  【Invited】Kenta Arima
“Small Holes in Graphene: a Key in Graphene-Assisted Chemical Etching of Semiconductor Surfaces”
PROGRAM & ABSTRACTS of EMN Meeting on Porous Materials 2019, Dubrovnik, Croatia, pp. 19-21 (2019).
 
47.  K. Arima, R. Ito, O. Minami, K. Hosoo, Y. Sano, and K. Kawai
"Surface Modification of SiC by Plasma Oxidation to Form Graphene/SiC Structure with Low Pit Density"
Abstract Book & Schedule of 45th Conference on the Physics & Chemistry of Surfaces & Interfaces, Kona, USA, p. 31 (2018).
 
46.  【Invited】K. Arima, T. Hosoi, H. Watanabe and E.J. Crumlin
"Reactivity of Water Vapor with Ultrathin GeO2/Ge and SiO2/Si Structures Investigated by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy"
Meeting Program of 232nd Meeting of The Electrochemical Society, National Harbor, USA, pp. 118 (2017).
(ECS Transactions, Vol. 80, No. 2 (15th International Symposium on Semiconductor Cleaning Science and Technology), pp. 131-140 (2017).)
 
45. K. Arima, K. Nakade, D. Mori, Y. Saito, K. Kawai, and M. Morita
"Catalysts to Enhance Chemical Etching of Ge Surfaces in Water: From Noble Metals to Reduced Graphene Oxide"
Meeting Program of 231st Meeting of The Electrochemical Society, New Orleans, USA, pp. 165 (2017).
(ECS Transactions, Vol. 77, No. 4 (Processes at the Semiconductor Solution Interface 7), pp. 127-133 (2017).)
 
44. 【Invited】Kenta Arima, Kentaro Kawai and Mizuho Morita
"Atomic-Scale Analysis of Semiconductor Surfaces after Wet-Chemical Treatments Such as Cleaning and Polishing"
Conference Abstract Book of BIT's 6th Annual World Congress of Nano Science & Technology -2016, Singapore, p. 174 (2016).
 
43. K. Arima, K. Hosoo, R. Ito, N. Saito, K. Kawai, Y. Sano, and M. Morita
"Characterization of Aggregated Carbon Compounds at SiO2/SiC Interface after Plasma Oxidation at Near Room Temperature"
Meeting Program of PRiME 2016, Honolulu, USA, p. 283 (2016).
 
42. T. Kawase, A. Mura, Y. Saito, T. Okamoto, K. Kawai, Y. Sano, K. Yamauchi, M. Morita, and K. Arima
"Pit Formation, Patterning and Flattening of Ge Surfaces in O2-Containing Water by Metal-Assisted Chemical Etching"
Meeting Program of PRiME 2016, Honolulu, USA, pp. 124 (2016).
(ECS Transactions, Vol. 75, No. 1 (Pits & Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications), pp. 107-112 (2016).)
 
41. 【Invited】Kenta Arima, Yoshie Kawai, Kentaro Kawai and Mizuho Morita
"Ion Segregation in Deliquesced Droplets of Alkali Halide Nanocrystals on SiO2 Approached by both Surface Science Techniques and Electrical Characteristics"
Program of Collaborative Conference on 3D & Materials Research, Incheon/Seoul, South Korea, pp. 223-226 (2016).
 
40.  【Invited】Kenta Arima
"Segregation of ions in deliquesced droplets of alkali-halide nano-crystals on SiO2"
Proceedings of International Conference and Exhibition on Materials Chemistry
(Journal of Material Sciences & Engineering, Vol. 5, No. 2), Valencia, Spain, p. 69 (2016).
 
 39. K. Arima, D. Mori, Y. Saito, H. Oka, K. Kawai, T. Hosoi, M. Morita, H. Watanabe and Z. Liu
"Origin of Anomalous Positive Charging of Water-adsorbed Thin GeO2 Films Studied by Ambient-pressure XPS"
Program and Exhibition of 16th European Conference on Application of Surface and Interface Analysis, Granada, Spain, p. 254 (2015).
 
 38. Kenta Arima, Tatsuya Kawase, Atsushi Mura, Kentaro Kawai, Yasuhisa Sano, Kazuto Yamauchi and Mizuho Morita
"Metal-Assisted Etching of Ge Surfaces in Water: From Pit Formation to Flattening"
Program of 2015 MRS Spring Meeting & Exhibit, San Francisco, USA, p. 329 【OO2.03】 (2015).
 
 37. K. Arima, Y. Kawai, Y. Minoura, Y. Saito, D. Mori, H. Oka, K. Kawai, T. Hosoi, Z. Liu, H. Watanabe, and M. Morita
"Ambient-Pressure XPS Study of GeO2/Ge(100) and SiO2/Si(100) at Controlled Relative Humidity"
Meeting Program of 226th Meeting of The Electrochemical Society, Cancun, Mexico, pp. 71 (2014).
ECS Transactions, Vol. 64, No. 8 (Semiconductors, Dielectrics, and Metals for Nanoelectronics 12), pp. 77-82 (2014).)
 
 36. N. Saito, D. Mori, A. Imafuku, K. Kawai, Y. Sano, M. Morita, and K. Arima
"Behaviors of Carbon Atoms during Plasma Oxidation of 4H-SiC(0001) Surfaces near Room Temperature"
Meeting Program of 226th Meeting of The Electrochemical Society, Cancun, Mexico, pp. 72 (2014).
ECS Transactions, Vol. 64, No. 17 (State-of-the-Art Program on Compound Semiconductors 56), pp. 23-28 (2014).)
 
 35. 【Invited】Kenta Arima, Naoki Saito, Daichi Mori, Kentaro Kawai, Mizuho Morita and Yasuhisa Sano
“Combination of Plasma Oxidation and Wet Etching to Create Monolayer-scale C Source for Pit-free Graphene on SiC Surfaces”
Program of Collaborative Conference on 3D & Materials Research 2014, Incheon/Seoul, South Korea, pp. 248-249 (2014).

 
 34. 【Invited】Kenta Arima, Kentaro Kawai, and Mizuho Morita
“Understanding Water Interaction with Ge Surfaces: From Wetting to Machining”
Conference Abstract Book of BIT's 3rd Annual World Congress of Advanced Materials 2014, Chongqing, China, p. 260 (2014).
  
 33. Kenta Arima, Naoki Saito, Kentaro Kawai, Yasuhisa Sano and Mizuho Morita
“Accumulation of C Atoms at SiO2/SiC Interface by Plasma Oxidation of 4H-SiC(0001) at Room Temperature: Toward Formation of Pit-Free Graphene”
PROGRAM of 2014 MRS Spring Meeting & Exhibit, San Francisco, USA, p. 292 【DD7.05】 (2014).
 
 32. K. Arima, A. Mura, I. Hideshima, T. Hosoi, H. Watanabe and Z. Liu
“Interaction of Water Vapor with GeO2/Ge(100) Revealed by In Situ XPS under Controlled Relative Humidity”
Abstracts of 15th European Conference on Applications of Surface and Interface Analysis, Forte Village, Italy, p. 139 (2013).
 
 31. 【Invited】Kenta Arima, Kentaro Kawai, Takuji Hosoi, Junichi Uchikoshi, Zhi Liu, Heiji Watanabe, and Mizuho Morita
“Nanoscale Interaction of Water with Germanium Surfaces: Wetting, Etching and Machining properties”
Program and Abstract of Collaborative Conference on 3D & Materials Research, Jeju, South Korea, pp. 125-127 (2013).
 
 30. 【Invited】Kenta Arima, Atsushi Mura, Iori Hideshima, Takuji Hosoi,
Heiji Watanabe, Zhi Liu
“Effect of Water Growth on Quality of GeO2/Ge Revealed by in-situ XPS”
Program of Symposium on Surface and Nano Science 2013, Zao/Yamagata, p. 7 (2013).
 
 29. K. Arima, K. Nishitani, N. Saito, K. Kawai, J. Uchikoshi, K. Yamauchi, Y. Sano
and M. Morita
“Low temperature growth of graphene on 4H-SiC(0001) flattened by catalyst-assisted etching in HF solution”
Abstract Book of 24th General Conference of the Condensed Matter Division of the European Physical Society held jointly with 29th European Conference on Surface Science, Edinburgh, UK, p. 145 (2012).
 
 28. K. Arima, T. Kawase, A. Mura, Y. Kawai, K. Kawai, J. Uchikoshi and M. Morita
“Metal-induced anisotropic etching of Ge(100) surfaces in water with dissolved oxygen”
Abstract Book of 24th General Conference of the Condensed Matter Division of the European Physical Society held jointly with 29th European Conference on Surface Science, Edinburgh, UK, p. 467 (2012).
 
 27. Kenta Arima, Naoki Saito, Hiroaki Nishikawa, Yasuhisa Sano, Kentaro Kawai, Junichi Uchikoshi, Kazuto Yamauchi, and Mizuho Morita
“Low Temperature Growth of Graphene on Atomically Flat SiC Assisted by Plasma Oxidation”
Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, Osaka, pp. 10-11 (2012).
 
 26. Kenta Arima, Tatsuya Kawase, Keisuke Nishitani, Atsushi Mura, Kentaro Kawai, Junichi Uchikoshi, and Mizuho Morita
“Catalytic Behavior of Metallic Particles in Pit Formation of Ge(100) Surfaces in Water”
Abstracts of 220th Meeting of The Electrochemical Society, Boston, USA, pp. 2063 (2012).
ECS Transactions, Vol. 41, No. 5 (Semiconductor Cleaning Science and Technology 12), pp. 171-178 (2011).)
 
 25. Hiroki Sakane, Keisuke Nishitani, Azusa N. Hattori, Takeshi Okamoto, Kentaro Kawai, Junichi Uchikoshi, Yasuhisa Sano, Mizuho Morita, Kazuto Yamauchi, and Kenta Arima
“Graphene Formation on 4H-SiC(0001) Surface Flattened by Catalyst-Assisted Chemical Etching in HF Solution”
Abstracts of 220th Meeting of The Electrochemical Society, Boston, USA, pp. 2065 (2012).
ECS Transactions, Vol. 41, No. 6 (State-of-the-Art Program on Compound Semiconductors 53), pp. 241-248 (2011).)
 
 24. K. Arima, P. Jiang, D.-S. Lin, A. Verdaguer, H. Bluhm and M. Salmeron
“Ion Segregation and Deliquescence of Alkali Halide Nanocrystals on SiO2 Revealed by Scanning Polarization Force Microscopy”
Technical Program of AVS 57th International Symposium & Exhibition, New Mexico, USA, p. 148 (2010).
 
 23. K. Arima
“Water Adsorption, Deliquescence and Ion Segregation of Alkali Halide Thin Films on SiO2
Extended Abstracts of Third International Symposium on Atomically Controlled Fabrication Technology, Osaka, pp. 56-57 (2010).
 
 22. K. Arima, K. Dei, T. Kawase, K. Yoneda, J. Uchikoshi and M. Morita
“Step/terrace Structures of HCl-treated Ge(111) Surfaces Revealed by STM”
Extended Abstracts of First International Symposium on Atomically Controlled Fabrication Technology, Osaka, pp. 162-163 (2009).
 
 21. Kenta Arima and Mizuho Morita
“Development of wet-chemical procedures to control emerging semiconductor surfaces on the atomic scale”
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, pp. 51-52 (2007).
 
 20. Kenta Arima, Ryosuke Suga, Hideyuki Hara, Junji Murata, Keita Yagi,
Hidekazu Mimura, Yasuhisa Sano and Kazuto Yamauchi
“Atomically Resolved STM Study of 4H-SiC(0001) Surfaces Flattened by Chemical Etching in HF solutions with Pt Catalyst”
Technical Digest of International Conference on Silicon Carbide and Related Materials 2007, Ohtsu, pp. We 28-29 (2007).
 
 19. Kenta Arima, Takushi Shigetoshi, Haruyuki Inoue, Tsukasa Kawashima, Takaaki Hirokane, Toshihiko Kataoka and Mizuho Morita
“Nano-scale Characterization of Surface Defects on Polished Si Wafers by Atomic Force Microscopy Combined with Laser Light Scattering”
Program of 2007 MRS Spring Meeting & Exhibit, San Francisco, USA, C8.2 (2007).
Materials Research Society Symposium Proceedings, Vol. 991 (Advances and Challenges in Chemical Mechanical Planarization), pp. 0991-C08-02 1-6 (2007).)
 
 18. Kenta Arima, Hideyuki Hara, Keita Yagi, Ryota Okamoto, Hidekazu Mimura, Akihisa Kubota and Kazuto Yamauchi
“Atomic-scale Characterization of HF-treated 4H-SiC(0001)1x1 Surfaces by Scanning Tunneling Microscopy”
Program of 2007 MRS Spring Meeting & Exhibit, San Francisco, USA, H7.6 (2007).
Materials Research Society Symposium Proceedings, Vol. 996E (Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies), pp. 0996-H07-06 1-6 (2007).)
 
 17. 【Invited】Kenta Arima and Kazuto Yamauchi
“Formation of Atomically Flat 4H-SiC(0001) Surfaces by Wet-chemical Preparations”
ABSTRACTS of Handai Nanoscience and Nanotechnology International Symposium 2006, Osaka, pp. 31-32 (2006).
 
 16. Kenta Arima and Mizuho Morita
“Atomic-scale Characterization of Semiconductor Surfaces after Wet Cleaning”
Extended Abstracts of International 21st Century COE symposium on Atomistic Fabrication Technology, Osaka, pp.59-60 (2006).
 
 15. Kenta Arima, Kazuto Yamauchi, Hidekazu Mimura, Akihisa Kubota, Kouji Inagaki, Yuzo Mori, and Katsuyoshi Endo
“Atomic-level STM analyses of Si(001) surfaces prepared in aqueous environment”
Abstract Book of 33rd Conference on the Physics & Chemistry of Semiconductor Interfaces, Cocoa Beach, USA, Mo1355 (2006).
 
 14. Kenta Arima and Katsuyoshi Endo
“Atomic-scale Control of Semiconductor Surfaces in Aqueous Environment for Nano-scale Devices”
ABSTRACTS of Handai Nanoscience and Nanotechnology International Symposium, Osaka, pp. 22-23 (2006).
 
 13. Kenta Arima, Kenji Hiwa, Ryoji Nakaoka and Mizuho Morita
“Surface Hall Potentiometry to Characterize Functional Semiconductor Films”
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, Kobe, pp. 378-379 (2005).
 
 12. K. Arima, J. Katoh and K. Endo
“Atomic Images of H-Terminated Si(110)-(1x1) Surfaces by Wet Cleaning”
Abstracts of 13th International Conference on Scanning Tunneling Microscopy/ Spectroscopy and Related Techniques, Sapporo, p. 360 (2005).
 
 11. K. Arima, K. Yamauchi, H. Mimura, A. Kubota, K. Inagaki, Y. Mori and K. Endo
“Atomic-Scale Evaluation of Si(001) Surfaces Finished by Novel Global Planarization Process”
Abstracts of 13th International Conference on Scanning Tunneling Microscopy/ Spectroscopy and Related Techniques, Sapporo, p. 335 (2005).
 
 10. K. Arima, T. Shigetoshi, H. Kakiuchi and M. Morita
“Surface photovoltage measurements of amorphous Si films on Si wafers by STM/STS”
Program and Abstracts of the 23rd International Conference on Defects in Semiconductors, Awaji, p. 379 (2005).
 
 9. Kenta Arima, Jun Katoh and Katsuyoshi Endo
“Hydrogen Termination of the Si(110) Surface by Wet Cleaning Revealed by Atomically Resolved Scanning Tunneling Microscopy”
Program of 2005 MRS Spring Meeting, San Francisco, USA, Q5-8 (2005).
 
 8. Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita
and Yuzo Mori
“Scanning tunneling microscopy observations of intrinsic hydrogenated amorphous silicon surface under visible light irradiation”
Program and Abstracts of the 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, p. 256 (2003).
 
 7. Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita
and Yuzo Mori
“Visible Light Irradiation Effects on Atomic-Scale Observations of Hydrogenated Amorphous Silicon Films by Scanning Tunneling Microscopy”
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, pp. 500-501 (2003).
 
 6. K. Arima, K. Endo, K. Hirose, T. Kataoka and Y. Mori
“Effect of wet cleaning on hydrogen termination of the Si(001) surface in an atomic scale”
Technical Program & Abstracts of STM'01, Vancouver, Canada, p. 145 (2001).
 
 5. Katsuyoshi Endo, Kenta Arima, Toshihiko Kataoka, Yasushi Oshikane, Haruyuki Inoue, Kenji Koba, Kikuji Hirose, and Yuzo Mori
“Scanning Tunneling Microscopy/Spectroscopy Observations of Metal Adsorbed Si(001)2×1 Surfaces”
Precision Science and Technology for Perfect Surfaces (Proceedings of the 9th International Conference on Production Engineering) Osaka, pp. 843-848 (1999).
 
 4. Katsuyoshi Endo, Kenta Arima, Toshihiko Kataoka, Yasushi Oshikane, Haruyuki Inoue, Kenji Koba, Hiroki Nakahama, and Yuzo Mori
“Scanning Tunneling Microscopy Observations of Hydrogen Terminated Si(001) Surfaces after Wet Cleaning”
Precision Science and Technology for Perfect Surfaces (Proceedings of the 9th International Conference on Production Engineering) Osaka, pp. 485-490 (1999).
 
 3. K. Endo, K. Arima, T. Kataoka, K. Hirose, Y. Oshikane, H. Inoue, H. Kuramochi, T. Sato, Y. Mori
“STM/STS and the first principles calculations on Al/Si(001)2×1”
Program of 9th International Conference on Scanning Tunneling Microscopy/ Spectroscopy and Related Techniques, Hamburg, Germany, p. 11 (1997).
 
 2. Katsuyoshi Endo, Toshihiko Kataoka, Yuzo Mori, Kohji Inagaki, Yasushi Oshikane, Haruyuki Inoue, Kenta Arima, Yuichi Masuda, and Yoshitaka Tatara
“Observation of Metal Atoms Adsorbed on H-Terminated Si(001) Surfaces by STM/STS”
Proceedings of 1996 the Japan-China Bilateral Symposium on Advanced Manufacturing Engineering, Kanagawa, pp. 141-146 (1996).
 
 1. Katsuyoshi Endo, Toshihiko Kataoka, Yuzo Mori, Kohji Inagaki, Yasushi Oshikane, Haruyuki Inoue, Kenta Arima, Yuichi Masuda, and Yoshitaka Tatara
“Observation of Metal Atoms Adsorbed on H-Terminated Si(001) Surfaces by STM/STS and Its Consideration Based on Ab-Initio Molecular Orbital Calculations”
Proceedings of the MRS-J, Makuhari, p. 189 (1996).
 

  

外部資金獲得状況〔研究代表者のみ〕

43.  科学研究費補助金 基盤研究(A)〔令和4年度~令和7年度〕 
42. 科学研究費補助金 挑戦的研究(萌芽) 〔令和3年度~令和5年度〕  
41. 公益財団法人 三豊科学技術振興協会 研究助成〔令和2年度〕
40. 公益財団法人 大倉和親記念財団 研究助成 〔令和元年度〕
39.  公益財団法人 東電記念財団 研究助成 〔平成31年度~令和2年度〕
38.  科学研究費補助金 基盤研究(B)〔平成31年度~令和3年度〕 
37. 公益財団法人 中部電気利用基礎研究振興財団 研究助成 〔平成30年度~令和2年度〕
36. 一般財団法人 先端加工機械技術振興協会 研究助成 〔平成30年度〕
35. 公益財団法人 泉科学技術振興財団 研究助成 〔平成30年度〕 
34. 科学研究費補助金 挑戦的研究(萌芽) 〔平成30年度~令和2年度〕 
33.  公益財団法人 加藤科学振興会 研究助成 〔平成30年度〕
32.  公益財団法人 マザック財団 研究助成 〔平成29年度〕 
31. 公益財団法人 カシオ科学振興財団 研究助成 〔平成29年度〕
30. 科学研究費補助金 挑戦的萌芽研究 〔平成28年度~29年度〕
29. 公益社団法人 御器谷科学技術財団 研究開発助成 〔平成27年度〕
28.  科学研究費補助金 基盤研究(B)〔平成27年度~29年度〕
27. 公益財団法人 村田学術振興財団 研究助成 〔平成27年度〕
26.  科学研究費補助金 挑戦的萌芽研究 〔平成26年度~27年度〕
25. 科学研究費補助金 若手研究(A)〔平成24年度~26年度〕
24. 科学研究費補助金 挑戦的萌芽研究 〔平成24年度~26年度〕
23.  公益財団法人 住友電工グループ社会貢献基金 学術・研究助成 〔平成24年度〕
22.  財団法人 一樹工業技術奨励会 研究助成 〔平成24年度〕
21.  公益財団法人 天野工業技術研究所 研究助成 〔平成24年度〕
20.  公益財団法人 大澤科学技術振興財団 研究助成 〔平成23年度〕
19.  公益財団法人 池谷科学技術振興財団 研究助成 〔平成23年度〕
18.  公益財団法人 マザック財団 研究助成 〔平成22年度〕
17.  公益財団法人 泉科学技術振興財団 研究助成 〔平成21年度〕
16. 公益財団法人 山田科学振興財団 長期間派遣援助 〔平成20年度〕
15.  科学研究費補助金 特定領域研究(公募研究) 〔平成19年度〕
14.  一般財団法人 材料科学技術振興財団 研究助成 〔平成19年度〕
13.  公益財団法人 徳山科学技術振興財団 研究助成 〔平成19年度〕
12.  公益財団法人 稲盛財団 研究助成 〔平成19年度〕 
11.  公益財団法人 日本証券奨学財団 研究調査助成 〔平成19年度〕
10.  公益財団法人 マツダ財団 研究助成 〔平成18年度〕
9.  公益財団法人 関西エネルギー・リサイクル科学研究振興財団 研究助成 〔平成17年度〕
8.  公益財団法人 矢崎科学技術振興記念財団 奨励研究助成 〔平成17年度〕
7.  科学研究費補助金 若手研究(B) 〔平成17年度~18年度〕
6.  一般財団法人 大阪大学後援会 研究助成 〔平成16年度〕
5.  公益財団法人 日産財団 研究助成 〔平成16年度〕
4. 公益財団法人 島津科学技術振興財団 研究開発助成 〔平成16年度〕
3.  公益財団法人 村田学術振興財団 研究助成 〔平成14年度〕
2.  科学研究費補助金 若手研究(B) 〔平成15年度~16年度〕
1.  科学研究費補助金 奨励研究(A)→ 若手研究(B) 〔平成13年度~14年度〕

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