 @Original papers |
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Ion Segregation and Deliquescence of Alkali Halide Nanocrystals on SiO2
Kenta Arima, Peng Jiang, Deng-Sung Lin, Albert Verdaguer, and Miquel Salmeron
The Journal of Physical Chemistry A, vol. 113, no. 35, pp. 9715-9720 (2009). |
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Damage-free planarization of 2-inch 4H-SiC wafer using Pt catalyst plate and HF solution
T. Okamoto, Y. Sano, H. Hara, K. Arima, K. Yagi, J. Murata, H. Mimura, and K. Yamauchi
Materials Science Forum, vol. 600-603, pp. 835-838 (2009). |
| (42) |
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Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
Takaaki HIROKANE, Hideaki HASHIMOTO, Daisuke KANZAKI, Shinichi URABE, Kenta ARIMA, Junichi UCHIKOSHI, and Mizuho MORITA
Analytical Sciences, vol. 25, no. 1, pp. 101-104 (2009). |
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Development of surface Hall potentiometry to reveal the variation of drift
velocity of carriers in semiconductor materials
Kenta ARIMA, Yuji HIDAKA, Kenji HIWA, Junichi UCHIKOSHI, Mizuho MORITA
Japanese Journal of Applied Physics, vol. 47, no. 4, pp. 3041-3045 (2008). |
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Ex situ scanning tunneling microscopy study of Cu nanowires formed by electroless
deposition at atomic-step edges of flat Si(111) surfaces
Akina Yoshimatsu, Takushi Shigetoshi, Junichi Uchikoshi, Mizuho Morita
and Kenta Arima
Surface and Interface Analysis, vol. 40, no. 6-7, pp. 1134-1137 (2008). |
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Characterization of Pinhole in Pattened Oxide Buried in Bonded Silicon-on-Insulator
Wafers by Near-Infrared Scattering Topography and Transmission Microscopy
Xing Wu, Junichi Uchikoshi, Takaaki Hirokane, Ryuta Yamada, Akihiro Takeuchi, Kenta Arima and Mizuho Morita
Journal of The Electrochemical Society, vol. 155, no. 11, pp. H864-H868 (2008). |
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Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method
Takaaki HIROKANE, Naoto YOSHII, Tatsuya OKAZAKI, Shinichi URABE, Kazuo
NISHIMURA, Satoru MORITA, Kenta ARIMA, Junichi UCHIKOSHI, and Mizuho MORITA
Japanese Journal of Applied Physics, vol. 47, no. 11, pp. 8317-8320 (2008). |
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Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
Xing WU, Junichi UCHIKOSHI, Takaaki HIROKANE, Ryuta YAMADA, Akihiro TAKEUCHI,
Kenta ARIMA and Mizuho MORITA
Japanese Journal of Applied Physics, vol. 47, no. 4, pp. 3041-3045 (2008). |
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Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared
Interferometry
Junichi UCHIKOSHI, Amane TSUDA, Noritaka AJARI, Taichirou OKAMOTO, Kenta ARIMA, and Mizuho MORITA
Japanese Journal of Applied Physics, vol. 47, no. 12, pp. 8978-8981 (2008). |
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Sensing of ΙDNA solutions by metal-gap-semiconductor devices
Takaaki Hirokane, Daisuke Kanzaki, Hideaki Hashimoto, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
Surface and Interface Analysis, vol. 40, no. 6-7, pp. 1131-1133 (2008). |
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Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution
J. Murata, A. Kubota, K. Yagi, Y. Sano, H. Hara, K. Arima, T. Okamoto, H. Mimura, K. Yamauchi
Journal of Crstal Growth, vol. 310, pp. 1637-1641 (2008). |
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Catalyst-referred etching of 4H-SiC substrate utilizing hydroxyl radicals
generated from hydrogen peroxide molecules
Keita Yagi, Junji Murata, Akihisa Kubota, Yasuhisa Sano, Hideyuki Hara, Takeshi Okamoto, Kenta Arima, Hidekazu Mimura, Kazuto Yamauchi
Surface and Interface Analysis, vol. 40, no. 6-7, pp. 998-1001 (2008). |
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Defect-free Planarization of 4H-SiC(0001) Substrate Using Reference Plane
Keita YAGI, Junji MURATA, Akihisa KUBOTA, Yasuhisa SANO, Hideyuki HARA,
Kenta ARIMA, Takeshi OKAMOTO, Hidekazu MIMURA, and Kazuto YAMAUCHI
Japanese Journal of Applied Physics, vol. 47, no. 1, pp. 104-107 (2008). |
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Atomic-scale flattening of SiC surfaces by electroless chemical etching
in HF solution with Pt catalyst
Kenta Arima, Hideyuki Hara, Junji Murata, Takeshi Ishida, Ryota Okamoto, Keita Yagi,
Yasuhisa Sano, Hidekazu Mimura, and Kazuto Yamauchi
Applied Physics Letters, vol. 90(20) 202106 1-3 (2007). |
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Microscratches with Depths of Angstrom Order on Si Wafers Detected by Light
Scattering and AFM
Takushi Shigetoshi, Haruyuki Inoue, Tsukasa Kawashima, Takaaki Hirokane,
Toshihiko Kataoka, Mizuho Morita, and Kenta Arima
Electrochemical and Solid-State Letters, vol. 10(7), H206-H209 (2007). |
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Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling
Coherence Length of Light Source using Near-Infrared Microscope
Noritaka Ajari, Junichi Uchikoshi, Takaaki Hirokane, Kenta Arima and Mizuho Morita
Japanese Journal of Applied Physics, vol. 46(4B) pp. 1994-1996 (2007). |
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Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure
with Aluminum Grid Gate
Hideaki Hashimoto, Ryuta Yamada, Takaaki Hirokane, Kenta Arima, Junichi Uchikoshi, and Mizuho Morita
Japanese Journal of Applied Physics, vol. 46(4B), 2467-2470 (2007). |
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Damage-free Planarization of 4H-SiC(0001) by Catalyst-Referred Etching
Hideyuki Hara, Yasuhisa Sano, Hidekazu Mimura, Kenta Arima, Akihisa Kubota, Keita Yagi, Junji Murata, and Kazuto Yamauchi
Matreials Science Forum, vol. 556-557, 749-751 (2007). |
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Polishing Characteristics of 4H-SIC Si-face and C-face by Plasma Chemical
Vaporization Machining
Yasuhisa Sano, Masayo Watanabe, Kazuya Yamamura, Kazuto Yamauchi, Takeshi Ishida, Kenta Arima, Akihisa Kubota and Yuzo Mori
Materials Science Forum, vol. 556-557, 757-760 (2007). |
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Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
Akinobu Teramoto, Tatsufumi Hamada, Masashi Yamamoto, Philippe Gaubert, Hiroshi Akahori, Keiichi Nii, Masaki Hirayama, Kenta Arima, Katsuyoshi Endo, Shigetoshi Sugawa, and Tadahiro Ohmi
IEEE Transactions on Electron Devices, vol. 54(6), 1438-1445 (2007). |
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Highly resolved scanning tunneling microscopy study of Si(001) surfaces
flattened in aqueous environment
Kenta Arima, Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Katsuyoshi Endo, Yuzo
Mori and Kazuto Yamauchi
Surface Science, vol. 600, L185-L188 (2006). |
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Surface Hall Potentiometry for Characterizing Semiconductor Films
Kenta Arima, Kenji Hiwa, Ryoji Nakaoka and Mizuho Morita
Japanese Journal of Applied Physics , vol. 45(4B), 3601-3605 (2006). |
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Novel abrasive-free planarization of 4H-SiC(0001) using catalyst
Hideyuki Hara, Yasuhisa Sano, Hidekazu Mimura, Kenta Arima, Akihisa Kubota, Keita Yagi and Kazuto Yamauchi
Journal of Electronic Materials, vol. 35, no. 8, L11-L14 (2006). |
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Atomic-Scale Evaluation of Si(111) Surfaces Finished by the Planarization
Process Utilizing SiO2 Particles Mixed with Water
Jun Katoh, Kenta Arima, Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Yuzo Mori, Kazuto Yamauchi, and Katsuyoshi Endo
Journal of The Electrochemical Society, vol. 153, no. 6, G560-G565 (2006). |
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Surface photovoltage measurements of intrinsic hydrogenated amorphous Si films on Si wafers on the nanometer scale
Kenta Arima, Takushi Shigetoshi, Hiroaki Kakiuchi, Mizuho Morita
Physica B, vol. 376-377, 893-896 (2006). |
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Photocurrent through SnO2/SiC/p-Si(100) Structures
Shuhei Nishikawa, Hideaki Hashimoto, Motonori Chikamoto, Kosuke Horikoshi,
Minoru Aoki, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
Thin Solid Films, vol. 508, 385-388 (2006). |
| (18) |
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Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization
Machining
Yasuhisa SANO, Masayo WATANABE, Kazuya YAMAMURA, Kazuto YAMAUCHI, Takeshi
ISHIDA, Kenta ARIMA, Akihisa KUBOTA and Yuzo MORI
Japanese Journal of Applied Physics, vol. 45, no. 10B, 8277-8280 (2006). |
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Observation of Oxide-film Step with Very Small Height on Si Wafer Surface
Using a Laser Scattering Method
Haruyuki INOUE, Toshihiko KATAOKA, Yoshihiro NAGAO, Yasushi OSHIKANE, Motohiro
NAKANO, Yasufumi OCHI, Kenta ARIMA and Mizuho MORITA
Journal of the Japan Society for Precision Engineering, 72, 1363-1367 (2006) (in Japanese). |
| (16) |
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Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by
highly-resolved scanning tunneling microscopy
Kenta Arima, Jun Katoh, Shinya Horie, Katsuyoshi Endo, Tomoya Ono, Shigetoshi Sugawa,
Hiroshi Akahori, Akinobu Teramoto and Tadahiro Ohmi
Journal of Applied Physics, 98(10), 103525 1-8 (2005). |
| (15) |
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First-principles study on scanning tunneling microscopy images of different
hydrogen-terminated Si(110) surfaces
Shinya Horie, Kenta Arima, Kikuji Hirose, Jun Katoh, Tomoya Ono and Katsuyoshi Endo
Physical Review B, 72, 113306 (2005). |
| (14) |
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Preparation of Ultrasmooth and Defect-Free 4H-SiC(0001) Surfaces by Elastic
Emision Machining
AKIHISA KUBOTA, HIDEKAZU MIMURA, KOUJI INAGAKI, KENTA ARIMA, YUZO MORI, AND KAZUTO YAMAUCHI
Journal of Electronic Materials, 34(4), 439-443 (2005). |
| (13) |
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Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet
cleaning
Kenta Arima, Jun Katoh and Katsuyoshi Endo
Applied Physics Letters, 85(25), 6254-6256 (2004). |
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Scanning tunneling microscopy/spectroscopy observation of intrinsic hydrogenated
amorphous silicon surfaces under light irradiation
Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita and Yuzo
Mori
Surface Science, 572(2-3), 449-458 (2004). |
| (11) |
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Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous
Silicon Surfaces
Kenta ARIMA, Hiroaki KAKIUCHI, Manabu IKEDA, Katsuyoshi ENDO, Mizuho MORITA and Yuzo
MORI
Japanese Journal of Applied Physics, 43, 1891-1895 (2004). |
| (10) |
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Flattening of Si(001) Surface by EEM (Elastic Emission Machining) - Atomic
Structure Identification of Processed Surface -
Kazuto YAMAUCHI, Hidekazu MIMURA, Akihisa KUBOTA, Kenta ARIMA, Kouji INAGAKI, Katsuyoshi ENDO and Yuzo MORI
Journal of the Japan Society for Precision Engineering, 70, 547-551 (2004) (in Japanese). |
| (9) |
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FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO2 Surfaces
Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Isao KOJIMA and Yasushi AZUMA
Analytical Sciences, 91, 1557-1559 (2003). |
| (8) |
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Atomic Structure of Si(001)-c(4x4) Formed by Heating Processes after Wet
Cleaning and Its First-Principles Study
Katsuyoshi ENDO, Tomoya ONO, Kenta ARIMA, Yuji UESUGI, Kikuji HIROSE and Yuzo MORI
Japanese Journal of Applied Physics, 42, 4646-4649 (2003). |
| (7) |
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Atomic images of hydrogen-terminated Si(001) surfaces after wet cleaning
and its first-principles study
Katsuyoshi Endo, Kenta Arima, Kikuji Hirose, Toshihiko Kataoka and Yuzo Mori
Journal of Applied Physics, 91(7), 4065-4072 (2002). |
| (6) |
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Scanning tunneling microscopy study of hydrogen-terminated Si(001) surfaces
after wet cleaning
Kenta Arima, Katsuyoshi Endo, Toshihiko Kataoka, Yasushi Oshikane, Haruyuki Inoue
and Yuzo Mori
Surface Science, 446(1-2), 128-136 (2000). |
| (5) |
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Atomically resolved scanning tunneling microscopy of hydrogen-terminated
Si(001) surfaces after HF cleaning
Kenta Arima, Katsuyoshi Endo, Toshihiko Kataoka, Yasushi Oshikane, Haruyuki Inoue
and Yuzo Mori
Applied Physics Letters, 76(4), 463-465 (2000). |
| (4) |
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STM/STS observation and First-Principles Simulations of Metal Adsorbed
Si(001) Surfaces
Katsuyoshi ENDO, Kenta ARIMA, Toshihiko KATAOKA, Yasushi OSHIKANE, Haruyuki INOUE, Kenji KOBA, Kikuji
HIROSE and Yuzo MORI
Technology Reports of the Osaka University, 50(2371), 41-47 (2000). |
| (3) |
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Observation of Metal on Si(001) by STM/STS and Its Consideration Based
on the First-Principles Calculation
Kenta Arima, Katsuyoshi Endo, Toshihiko Kataoka, Kikuji Hirose, Hidekazu Goto, Yasushi
Oshikane, Haruyuki Inoue, Yoshitaka Tatara and Yuzo Mori
Computational Materials Science, 114, 236-240 (1999). |
| (2) |
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Atomic structures of hydrogen-terminated Si(001) surfaces after wet cleaning
by scanning tunneling microscopy
Katsuyoshi Endo, Kenta Arima, Toshihiko Kataoka, Yasushi Oshikane, Haruyuki Inoue and Yuzo Mori
Applied Physics Letters, 73(13), 1853-1855 (1998). |
| (1) |
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STM/STS and the First Principles Calculations on Al/Si(001)2x1
Katsuyoshi Endo, Kenta Arima, Toshihiko Kataoka, Kikuji Hirose, Yasushi Oshikane, Haruyuki Inoue, Hiromi Kuramochi, Tomoshige Sato and Yuzo Mori
Applied Physics A, 66, S145-148 (1998). |
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 @ Internatinal conferences (presented by K. Arima) |
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| (21) |
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Atomically Resolved STM Study of 4H-SiC(0001) Surfaces Flattened by Chemical
Etching in HF solutions with Pt Catalyst
Kenta Arima, Ryosuke Suga, Hideyuki Hara, Junji Murata, Keita Yagi, Hidekazu Mimura,
Yasuhisa Sano and Kazuto Yamauchi
( International Conference on Silicon Carbide and Related Materials 2007 (Otsu) We 28-29 (2007)) |
| (20) |
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Development of wet-chemical procedures to control emerging semiconductor
surfaces on the atomic scale
Kenta Arima and Mizuho Morita
(International 21st Century COE Symposium on Atomistic Fabrication Technology (Osaka) 51-52 (2007)) |
| (19) |
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Atomic-scale Characterization of HF-treated 4H-SiC(0001)1x1 Surfaces by
Scanning Tunneling Microscopy
Kenta Arima, Hideyuki Hara, Keita Yagi, Ryota Okamoto, Hidekazu Mimura, Akihisa Kubota
and Kazuto Yamauchi
2007 MRS Spring Meeting (San Francisco) H7.6 (2007).
(Materials Research Society Symposium Proceedings, 996E, H07-06 (2007)) |
| (18) |
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Nano-scale Characterization of Surface Defects on Polished Si Wafers by Atomic Force Microscopy Combined with Laser Light Scattering
Kenta Arima, Takushi Shigetoshi, Haruyuki Inoue, Tsukasa Kawashima, Takaaki Hirokane,
Toshihiko Kataoka and Mizuho Morita
2007 MRS Spring Meeting (San Francisco) C8.2 (2007).
(Materials Research Society Symposium Proceedings, 991, C08-02 (2007)) |
| (17) |
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Formation of Atomically Flat 4H-SiC(0001) Surfaces by Wet-chemical Preparations
Kenta Arima and Kazuto Yamauchi
Handai Nanoscience and Nanotechnology International Symposium 2006 (Osaka) 31-32 (2006). |
| (16) |
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Atomic-scale Characterization of Semiconductor Surfaces after Wet Cleaning
Kenta Arima and Mizuho Morita
International 21st Century COE Symposium on Atomistic Fabrication Technology (Osaka) 59-60 (2006). |
| (15) |
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Atomic-scale Control of Semiconductor Surfaces in Aqueous Environment for
Nano-scale Devices
Kenta Arima and Katsuyoshi Endo
Handai Nanoscience and Nanotechnology International Symposium (Osaka) 22-23 (2006). |
| (14) |
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Atomic-level STM analyses of Si(001) surfaces prepared in aqueous environment
Kenta Arima, Kazuto Yamauchi, Hidekazu Mimura, Akihisa Kubota, Kouji Inagaki, Yuzo Mori and Katsuyoshi Endo
33rd Conference on the Physics & Chemistry of Semiconductor Interfaces (Cocoa Beach, Florida) Mo1355 (2006). |
| (13) |
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Surface Hall Potentiometry to Characterize Functional Semiconductor Films
Kenta Arima, Kenji Hiwa, Ryoji Nakaoka and Mizuho Morita
2005 International Conference on Solid State Devices and Materials (Kobe) 378-379 (2005). |
| (12) |
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Atomic Images of H-Terminated Si(110)-(1x1) Surfaces by Wet Cleaning
K. Arima, J. Katoh and K. Endo
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy
and Related Techniques (Sapporo) 360 (2005). |
| (11) |
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Atomic-Scale Evaluation of Si(001) Surfaces Finished by Novel Global Planarization
Process
K. Arima, K. Yamauchi, H. Mimura, A. Kubota, K. Inagaki, Y. Mori and K. Endo
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy
and Related Techniques (Sapporo) 335 (2005). |
| (10) |
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Surface photovoltage measurements of amorphous Si films on Si wafers by
STM/STS
K. Arima, T. Shigetoshi, H. Kakiuchi and M. Morita
23rd International Conference on Defects in Semiconductors (Awaji) 379 (2005). |
| (9) |
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Hydrogen Termination of the Si(110) Surfaces by Wet Cleaning Revealed by
Atomically Resolved Scanning Tunneling Microscopy
Kenta Arima, Jun Katoh and Katsuyoshi Endo
2006 MRS Spring Meeting (San Francisco) Q5-8 (2005). |
| (8) |
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Scanning tunneling microscopy observations of intrisic hydrogenated amorphous
silicon surfaces under visible light irradiation
Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita and Yuzo
Mori
7th International Conference on Atomically Controlled Surfaces, Interfaces
and Nanostructures (Nara) 256 (2003). |
| (7) |
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Visible Light Irradiation Effects on Atomic-Scale Observations of Hydrogenated
Amorphous Silicon Films by Scanning Tunneling Microscopy
Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita and Yuzo
Mori
2003 International Conference on Solid State Devices and Materials (Tokyo) 500-501 (2003). |
| (6) |
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Effect of wet cleaning on hydrogen termination of the Si(001) surface in
an atomic scale
K. Arima, K. Endo, K. Hirose, T. Kataoka and Y. Mori
11th International Conference on Scanning Tunneling Microscopy/Spectroscopy
and Related Techniques (Vancouver) 145 (2001). |
| (5) |
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Scanning Tunneling Microscopy/Spectroscopy Observations of Metal Adsorbed
Si(001)2x1 Surfaces
Katsuyoshi ENDO, Kenta ARIMA, Toshihiko KATAOKA, Yasushi OSHIKANE, Haruyuki INOUE, Kenji KOBA, Kikuji
HIROSE and Yuzo MORI
9th International Conference on Production Engineering (Osaka) 843-848 (1999). |
| (4) |
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Scanning Tunneling Microscopy Observations of Hydrogen Terminated Si(001)
Surfaces after Wet Cleaning
Katsuyoshi ENDO, Kenta ARIMA, Toshihiko KATAOKA, Yasushi OSHIKANE, Haruyuki INOUE, Kenji KOBA, Hiroshi
NAKAHAMA and Yuzo MORI
9th International Conference on Production Engineering (Osaka) 485-490 (1999). |
| (3) |
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STM/STS and the first principles calculations on Al/Si(001)-2x1
K. Endo, K. Arima, T. Kataoka, K. Hirose, Y. Oshikane, H. Inoue, H. Kuramochi, T. Sato and
Y. Mori
9th International Conference on Scanning Tunneling Microscopy/Spectroscopy
and Related Techniques (Hamburg) 24 (1997). |
| (2) |
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Observation of Metal Atoms Adsorbed on H-Terminated Si(001) Surfaces by
STM/STS
Katsuyoshi Endo, Toshihiko Kataoka, Yuzo Mori, Kohji Inagaki, Yasushi Oshikane,
Haruyuki Inoue, Kenta Arima, Yuichi Masuda and Yoshitaka Tatara
1996 the Japan-China Bilateral Symposium on Advanced Manufacturing Engineering (Kanagawa) 141-146 (1996). |
| (1) |
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Katsuyoshi Endo, Toshihiko Kataoka, Yuzo Mori, Kohji Inagaki, Yasushi Oshikane,
Haruyuki Inoue, Kenta Arima, Yuichi Masuda and Yoshitaka Tatara
Observation of Metal Atoms Adsorbed on H-Terminated Si(001) Surfaces by
STM/STS and Its Consideration Based on Ab-Initio Molecular Orbital Calculations
1996 MRS-J (Makuhari) 189 (1996). |
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